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The cryo-ultramicrotome cuts ultra-thin sections of samples at very low temperatures. Cooling the specimen preserves delicate structures and prevents deformation. This technique is often used for electron microscopy sample preparation.
The Leica RM2125 rotary microtome slices extremely thin sections of materials or biological samples. These sections are prepared for microscopic analysis. The instrument is widely used in histology and materials sample preparation.
The Filmetrics F-20 measures thin film thickness using optical reflectance spectroscopy. By analyzing reflected light from a film surface, the system calculates thickness and optical properties. It is widely used in semiconductor and coating research.
The DektakXT surface profilometer measures step heights and surface roughness on materials. A fine stylus scans across the sample surface to record topographical variations. It is commonly used to measure thin film thickness and etch depth.
The Olympus FV3000 is a laser scanning confocal microscope used for high-resolution imaging of fluorescent samples. It captures optical sections of samples to produce detailed three-dimensional images. This system is widely used in biological and materials imaging research.
The Talos F200i Transmission Electron Microscope provides atomic-scale imaging of materials. Electrons transmitted through ultra-thin samples reveal crystal structures, defects, and nanoscale features. This tool is essential for nanotechnology and advanced materials characterization.
The wafer bonder joins two semiconductor wafers together using pressure, heat, or adhesives. This technique is commonly used in MEMS fabrication and advanced semiconductor packaging. Wafer bonding allows the integration of multiple materials into a single device structure.
The P-Type diffusion furnace is used to introduce acceptor dopants into semiconductor substrates. This process creates p-type regions needed for transistor and diode structures. The furnace provides precise temperature control for consistent dopant diffusion.
The N-Type diffusion furnace introduces donor impurities into semiconductor materials to create n-type regions. High temperatures allow dopant atoms to diffuse into silicon wafers. This process is a fundamental step in semiconductor device fabrication.
The Rapid Thermal Annealer heats samples to high temperatures for very short time periods. This allows researchers to activate dopants or repair crystal damage without affecting the entire wafer structure. It is frequently used in semiconductor processing and materials research.
The Oxford PlasmaPro ICP/RIE system performs dry etching of materials using plasma chemistry. It combines inductively coupled plasma with reactive ion etching to provide precise control of etch rates and profiles. This tool is widely used in semiconductor pattern transfer and nanofabrication processes.
The Plasma-Enhanced Chemical Vapor Deposition system deposits thin films using plasma to activate chemical reactions in precursor gases. This process enables lower temperature deposition while maintaining high film quality. PECVD is commonly used to deposit dielectric materials such as silicon nitride and silicon dioxide.
The Plasma-Enhanced Atomic Layer Deposition (PEALD) system produces ultra-thin films one atomic layer at a time. Plasma activation allows film growth at lower temperatures compared to traditional ALD. This instrument is ideal for creating uniform coatings for nanoscale devices and semiconductor structures.
The electron beam evaporator deposits thin films by heating a source material with a focused electron beam in a vacuum chamber. The evaporated material condenses onto a substrate, forming highly pure coatings. This method is commonly used for depositing metals and high-purity materials in semiconductor fabrication.
The AJA ATC-2200 Magnetron Sputter System deposits thin films using physical vapor deposition (PVD). It uses ionized gas to eject atoms from a target material that then coat a substrate surface. Researchers use this system to create thin metal, oxide, and compound films used in microelectronics and nanotechnology.
The 3-Zone Tube Furnace is used for high-temperature thermal processing of materials under controlled atmospheric conditions. Its three independently controlled heating zones allow researchers to create uniform temperatures or gradients across samples. This instrument is commonly used for material synthesis, annealing, and diffusion experiments in semiconductor and materials science research.
Core specializes in the analysis of small organic and organometallic analytes. Provides access to mass spectrometers for all.
Facility provides access to nuclear magnetic resonance spectroscopy for all. Houses spectrometers ranging in field strength from 400 to 600 MHz, including two 500 MHz Brukers equipped with nitrogen-cooled Prodigy CryoProbes. New users may operate a particular spectrometer independently once they complete the required training and demonstrate the knowledge required for operating each instrument.
Three-dimensional (3D) common coordinate framework (CCF) and reference atlas that defines the spatial organization of cortical and subcortical structures in the adult human brain. This atlas modifies and expands the Allen Human Reference atlas (2020). This atlas parcellates the MNI152 ICBM2009b symmetric template, an averaged template from 152 young adult brains (mean age: 25.02 years, range: 18-44 years, 86 male, 66 female). The template has been sampled to 500 um3 voxel resolution and symmetrized along the right-left axis. This atlas includes annotations for all subcortical and cortical structures using a unified ontology developed for cross-species comparisons, the Harmonized Ontology of the Mammalian Brain Anatomy (HOMBA).
OME-Zarr is the emerging community standard image file format for cloud (S3 object store) compatible image data storage. Thus it is important to know how to access S3 hosted OME-Zarr in various image analysis and visualisation platforms.