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InGaP/GaAs/Ge triple-junction solar cells were irradiated with 5.1 MeV alpha particles with different fluences. The degradations of the optical and electrical properties of InGaP/GaAs/Ge solar cells were described in terms of the variation in the short-circuit current (Isc), the open-circuit voltage (Voc), the maximum power (Pmax), the spectral response (SR), and the photoluminescence (PL) versus the 5.1 MeV alpha-particle fluences. The degradation modeling of the Isc and Voc under 1 MeV, 3 MeV, and 5.1 MeV alpha-particle irradiation was performed by calculating the introduction rate of non-radiative recombination centers, and the minority-carrier capture cross section, and the results were in good agreement with experimental data. For comparison, the degradations of the Isc and Voc were presented under 1 MeV and 3 MeV proton irradiation.
Pubmed ID: 29867018
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Software mining pipeline guided by a Bayesian principle to detect single nucleotide polymorphisms, insertion and deletions by comparing high-throughput pyrosequencing reads with a reference genome of related organisms. This pipeline is extended to identify and visualize large-size structural variations, including insertions, deletions, inversions and translocations.
View all literature mentionsAn integrated software framework for efficient management, analysis and visualization of large amounts of gene expression data across replicated experiments.
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