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Realization of wafer-scale nanogratings with sub-50 nm period through vacancy epitaxy.

Qiushi Huang | Qi Jia | Jiangtao Feng | Hao Huang | Xiaowei Yang | Joerg Grenzer | Kai Huang | Shibing Zhang | Jiajie Lin | Hongyan Zhou | Tiangui You | Wenjie Yu | Stefan Facsko | Philippe Jonnard | Meiyi Wu | Angelo Giglia | Zhong Zhang | Zhi Liu | Zhanshan Wang | Xi Wang | Xin Ou
Nature communications | 2019

Gratings, one of the most important energy dispersive devices, are the fundamental building blocks for the majority of optical and optoelectronic systems. The grating period is the key parameter that limits the dispersion and resolution of the system. With the rapid development of large X-ray science facilities, gratings with periodicities below 50 nm are in urgent need for the development of ultrahigh-resolution X-ray spectroscopy. However, the wafer-scale fabrication of nanogratings through conventional patterning methods is difficult. Herein, we report a maskless and high-throughput method to generate wafer-scale, multilayer gratings with period in the sub-50 nm range. They are fabricated by a vacancy epitaxy process and coated with X-ray multilayers, which demonstrate extremely large angular dispersion at approximately 90 eV and 270 eV. The developed new method has great potential to produce ultrahigh line density multilayer gratings that can pave the way to cutting edge high-resolution spectroscopy and other X-ray applications.

Pubmed ID: 31164646

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Associated grants

  • Agency: National Natural Science Foundation of China (National Science Foundation of China), International
    Id: U1732268
  • Agency: National Natural Science Foundation of China (National Science Foundation of China), International
    Id: 11227902

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