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URL: https://sro.txst.edu/sro-facilities/sro-nrsc.html
Proper Citation: Texas State University Oxford ICP/RIE system (RRID:SCR_028203)
Description: Facility Oxford ICP-RIE Plaslab 180 utilizes a 3kW RF power supply to generate a remote plasma of Cl2, BCl3, H2, Ar, NF3, O2, SF6, and/or C4F8 gas species that can be further accelerated (300W table bias) toward a substrate resulting in a combination of physical and chemical dry etching for material removal. The turbomolecular pumped system achieves a base pressure < 1E-7 Torr and is equipped with chuck temperature control from -110 to 350 degrees C. Advanced dry etching system combining inductively coupled plasma (ICP) and reactive ion etching (RIE) for highly anisotropic, high-precision material removal in semiconductor and nanofabrication processes.
Synonyms: Oxford ICP/RIE (PlasmaPro 100)
Resource Type: instrument resource
Keywords: ICP, RIE, dry etching, plasma etching, semiconductor fabrication, nanofabrication
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