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URL: https://sro.txst.edu/sro-facilities/sro-nrsc/sro-nrsc-pecvd.html
Proper Citation: Texas State University PECVD System (RRID:SCR_028202)
Description: Facility plasma-enhanced chemical vapor deposition (PECVD) system from AGS utilizes plasma decomposition of silane (SiH4) in in presence of an oxygen or nitrogen source to deposit SiO2 and Si3N4 dielectric thin films. The capacitive coupled plasma reduces the required temperature for deposition to a minimum of ~150degC. A plasma-enhanced chemical vapor deposition system is used to deposit high-quality thin films at reduced temperatures for semiconductor and materials applications.
Synonyms: , PECVD System (Versaline PECVD), Plasma-Enhanced Chemical Vapor Deposition system
Resource Type: instrument resource
Keywords: PECVD, plasma deposition, thin films, dielectric layers, semiconductor
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